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DISCRETE SEMICONDUCTORS
DATA SHEET
BLT13 UHF power transistor
Preliminary specification File under Discrete Semiconductors, SC08b 1996 Apr 12
Philips Semiconductors
Preliminary specification
UHF power transistor
FEATURES * High efficiency * High gain * Internal pre-matched input. APPLICATIONS * Hand-held radio equipment in common emitter class-AB operation for 1.8 GHz Time Division Multiple Access (TDMA) communication systems. PINNING - SOT96-1 PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base emitter collector DESCRIPTION
1 4
MAM227 handbook, halfpage 8
BLT13
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package.
5 c b e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit. MODE OF OPERATION Pulsed, class-AB f (MHz) 1800 VCE (V) 6 PL (W) 2 Gp (dB) 6 C (%) 50
1996 Apr 12
2
Philips Semiconductors
Preliminary specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 130 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 10 2.5 1 1 +150 175
BLT13
UNIT V V V A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 1 W; Ts = 130 C; note 1 VALUE 45 UNIT K/W
Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 5 mA open base; IC = 10 mA open collector; IE = 1 mA VCE = 6 V; VBE = 0 VCE = 5 V; IC = 100 mA VCB = 6 V; IE = ie = 0; f = 1 MHz VCE = 6 V; IC = 0; f = 1 MHz MIN. 20 10 2.5 - 30 - - - - - 0.1 150 8 6 pF pF MAX. V V V mA UNIT
1996 Apr 12
3
Philips Semiconductors
Preliminary specification
UHF power transistor
APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (note 1). MODE OF OPERATION Pulsed, class-AB; = 1 : 8; tp 5 ms Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation f (MHz) 1800 VCE (V) 6 ICQ (mA) 2 PL (W) 2 Gp (dB) 6 typ. 8.5
BLT13
C (%) 50 typ. 65
The BLT13 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: = 1 : 8; tp 5 ms; f = 1800 MHz; VCE = 8.5 V; PL = 2 W; Ts 60 C.
MGD236
handbook, halfpage
10
Gp (dB)
Gp 8
100 C (%) 80
6 C 4
60
40
2
20
0 0 1 2 PL (W) 3
0
Pulsed, class-AB; = 1 : 8; tp 5 ms; f = 1800 MHz; VCE = 6 V; ICQ = 2 mA; tuned at PL = 2 W; Ts 60 C.
Fig.2
Power gain and collector efficiency as functions of load power; typical values.
1996 Apr 12
4
Philips Semiconductors
Preliminary specification
UHF power transistor
PACKAGE OUTLINE
BLT13
handbook, full pagewidth
5.0 4.8
4.0 3.8
A
S
0.1 S
6.2 5.8
0.7 0.3
8
5 1.45 1.25
0.7 0.6
0.25 0.19
1.75 1.35
1 pin 1 index
4
0.25 0.10 detail A
1.0 0.5
0 to 8
o
MBC180 - 1
1.27
0.49 0.36
0.25 M (8x)
Dimensions in mm.
Fig.3 SOT96-1.
1996 Apr 12
5
Philips Semiconductors
Preliminary specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLT13
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Apr 12
6
Philips Semiconductors
Preliminary specification
UHF power transistor
NOTES
BLT13
1996 Apr 12
7
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127061/1200/02/pp8 Document order number: Date of release: 1996 Apr 12 9397 750 00791

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